Signal generation, control and frequency conversion AlGaN/GaN HEMT MMICs

In this summary we review the design and experimental results of three new AlGaN/GaN HEMT MMICs: a voltage controlled oscillator, a single pole - double throw (SPDT) switch and a resistive FET mixer. The VCO exhibits frequency range between 8.5 and 9.5 GHz with maximum output power of 35 dBm (at V/sub ds/=30 V) across a 50 ohm load. The L/S band SPDT switch at 0.9, 1.8 and 2.1 GHz was measured to have 0.87, 0.96, 1 dB insertion loss and 46, 42 and 41 dB isolation respectively. The switch also shows linear performance for the power levels up to 1 Watt in the insertion mode. A singly-ended X-band resistive mixer have exhibited very low intermodulation, less than -60 dBc for the 2IF and 3IF at the RF power level of 10 dBm, and high power handling, P/sub 1dB/ is estimated to be at least 1 Watt, with the conversion loss of 17 dB.