BSIM4 high-frequency model verification for 0.13 /spl mu/m RF-CMOS technology

A compact model capable of simulating both DC and RF characteristics is highly desirable. This work is the first report of an extensive experimental evaluation of the accuracy of the BSIM4 model at high frequencies using a 0.13 /spl mu/m RF-CMOS process. The accuracy of the model is verified on both N-channel and P-channel devices through small-signal S-parameter measurements up to 50 GHz, 1/f noise measurements, and noise figure measurements in the 2-GHz to 6-GHz range.