Performance of AlGaN/GaN HFETs fabricated on 100 mm silicon substrates for wireless basestation applications

Third generation wireless communications standards such as W-CDMA place challenging requirements on microwave power transistors. To date, these challenges have been addressed with two primary technologies, Si LDMOS FETs and GaAs FETs. A new technology (AlGaN/GaN HFET) that shows the potential for addressing these strict system requirements is now becoming available. The growth and fabrication of GaN-based HFETs on a manufacturable 100 mm silicon platform are discussed. Results from 36 mm GaN HFETs are reported with particular attention to their ability to address the needs of the W-CDMA base transceiver station output power stage, demonstrating in excess of 15 W output power at W-CDMA operation with -39 dBc ACPR and 29% drain efficiency. Results of initial high-temperature operating life testing are presented, showing excellent device stability at a junction temperature of 200/spl deg/C, and predicting about 10% drift in DC parameters and less than 1 dB in output power over a 20-year life.