A high gain L-band GaAs FET technology for 28 V operation

This paper describes a successfully developed L-band FET for 28 V operation. The FET structure was adequately designed to realize breakdown voltage of 84 V and a gradual doping channel was adopted to improve the linearity. The FET realizes record operation voltage up to 42 V. The FET also exhibits power density of 1.05 W/mm, linear gain of 17.2 dB and IM3 of -33 dBc. A strait IM3 profile is obtained and so-called "plateau" profile is extinct. In addition, the estimated MTTF at Tch of 145/spl deg/C is longer than 4/spl times/10/sup 6/ hours.