30GHz-band 5.8W high-power AlGaN/GaN heterojunction-FET

This paper describes over 5-watt 30GHz-band operation of an AlGaN/GaN heterojunction FET fabricated on a SiC substrate. The device dimensions were optimized and the FET layout configuration was improved to make the best use of high breakdown voltage, high current and high gain characteristics of the short-channel GaN-based FET for advanced power performance. State-of-the-art performance of a saturated power of 5.8W with a linear gain of 9.2dB and a power-added efficiency (PAE) of 43.2% has been achieved employing a single chip having a gate width of 1.0mm and a gate length of 0.25/spl mu/m. These results indicate that the short-channel AlGaN/GaN heterojunction FET has a promising prospect for a variety of high-power applications at Ka-band and above.