A symmetric and thermally de-embedded nonlinear FET model for wireless and microwave applications

This paper describes the development of a new large-signal nonlinear FET model. The raison d'etre for this model is the design of modern wireless RFICs which places new demands on the predictions of linearity and efficiency of the circuit. The model is a hybrid, comprising an advanced development of the Chalmers University (a.k.a. 'Angelov') (Angelov et al., 1992) drain current model to include dynamic electro-thermal behavior, and a table-based HPFET (Root et al., 1991) 2-dimensional gate current and charge model. Both components are enhanced to include symmetry, even though the model is extracted from measurements made only on the half-space V/sub ds/ /spl ges/ 0. The model has been validated in class B amplifier, power amplifier and mixer RFIC applications.