A new GaN based field effect Schottky barrier diode with a very low on-voltage operation

We first demonstrated a new structure of GaN Schottky diode, with dual Schottky structures. That is, a field effect Schottky barrier diode (FESBD) was fabricated. The purpose of this diode was to lower the on-state voltage and to maintain a high reverse breakdown voltage. This diode was fabricated using an AlGaN/GaN heterojunction and a selective area growth (SAG) technique. We obtained an on-state voltage below 0.1 V, using a vertical type FESBD and the breakdown voltage was over 400 V using a planar type FESBD.