A simple transmission line de-embedding method for accurate RF CMOS noise modeling

We propose a simple method to de-embed the transmission line and pad parasitics from the measured RF noise of multi-finger MOSFETs with aggressive gate length scaling down to 80 nm and 65 nm respectively. Good agreement has been realized between measurement and simulation in terms of S-parameters and NF/sub min/ (minimum noise figure) for RF CMOS devices with various finger numbers by using this novel de-embedding method. The extracted NF/sub min/ after de-embedding matches well with the published noise correlation matrix method but is relatively simple without resort to complicated matrices calculation.