Localized transient charging and it's implication on the hot carrier reliability of HfSiON MOSFETs

Hot carrier reliability of poly-gated and TiN-gated MOSFETs with HfSiON gate dielectric is studied. For short channel devices, worse degradation of HfSiON occurs at V/sub g/=V/sub d/ while oxide devices are degraded more at V/sub g/=V/sub d//2 similar to oxide control devices. Localized transient charging at the drain comer of the HfSiON layer is proposed to explain the channel length dependence and time dependent relaxation of HC reliability characteristics.