Flash memory under cosmic & alpha irradiation

Neutron and proton irradiation to simulate cosmic ray jeopardy were used to establish that NOR Flash memory (conventional floating polySi gate or ONO floating gate MirrorBit/spl trade/) soft error failure rate (cross section) is 4-5 orders of magnitude better than SRAM. Flash memory soft error rate for a given dose of alpha particle irradiation is much less than for the same dose from simulated cosmic rays.