A PMOSFET ESD failure caused by localized charge injection

A new failure mechanism of PMOSFET devices under ESD conditions is reported and analyzed by investigating various I/O structures. Localized turn-on of the parasitic pnp transistor can be caused by localized charge injection into the body of the PMOSFET. Critical layout parameters affecting this problem are discussed based on 2-D device simulations. A general strategy for avoiding this failure mode is also suggested.