Electromigration lifetime prediction of RF-PA transistors

This work represents reliability investigation of LDMOS gold plating RF-PA transistors implemented in a base-station environment. Purpose of this work is to obtain knowledge for electromigration reliability assessment of the RF-PA and create an adequate method to predict the lifetime of Au/Si thin stripe implemented in structure of the RF-PA. Therefore, a procedure how to evaluate electromigration failure risks by combining microstructural analysis, lifetime acceleration experiments and adequate modelling is described.