Broad-band superluminescent diode based on multiquantum well (InGa)PAs heterostructure at 1550 nm

In present work SLDs fabrication of (InGa)PAs heterostructure were studied. For broad band superluminescent diodes, optical sensors based on "white light" interferometry-wide emission spectrum (small coherence length) is the main requirement. Record values of spectral linewidth are obtainable for SLDs based on quantum-well heterostructures.