1.3 gm Quantum dot distributed feedback lasers based on an asymmetric InAs/GaInAs dots-in-a-well design

This paper presents the device properties of single mode distributed feedback lasers based on InGaAs/GaAs quantum dots in a well design. This laser structure was grown by solid source molecular beam epitaxy. With this improved quantum dot DFB laser with shorter facet-coated cavities a significant improvement in the dynamic properties is achieved.