Optimisation of optical cavity design of GaN resonant cavity light emitting diodes

Resonant cavity light emitting diodes (RCLEDs) have shown considerable potential as sources in plastic optical fiber (POF) applications. The optical properties of the substrate emitting metal-DBR GaN RCLEDs differ considerably from those of the top emitting DBR-DBR RCLED structure of red RCLED devices. The optimum cavity design for maximum light extraction efficiency into numerical apertures (NAs) of 1.0 (total emission) and 0.5 (typical POF NA) have been determined as functions of the intrinsic emission linewidth of the InGaN/GaN QW emitter and the aluminum fraction in the DBR.