GaSb-based diode lasers for power applications in the 2 /spl mu/m spectral range

This paper has realized quantum well diode lasers based on the (AlGaIn)(AsSb) material system. Broad-area (BA) lasers have been processed, high-reflection/anti-reflection (HR/AR) coated and the devices were mounted p-side down to improve heat sinking. In order to study the material gain of the GaInSb active layers and determine possible improvements of the power efficiency, a set of lasers with one, two and three quantum wells (QWs) have been fabricated and analyzed. Using an electro-optical model that includes the thermal effects in the active region, the optimum design for high power lasers is discussed considering the number of QWs.