Characterization & modeling of low electric field gate-induced-drain-leakage [MOSFET]

We present measurements of GIDL at various temperatures and terminal biases. Besides band-to-band (BBT) tunneling leakage observed at high drain-to-gate voltage V/sub DG/, we also observed trap-assisted-tunneling (TAT) leakage currents at lower V/sub DG/. Based on ISE TCAD simulations of the electric field, we propose analytical models for BBT and TAT GIDL currents suitable for compact modelling.