Process and device reliability characterization techniques for advanced CMOS technology: the issues and methodologies

This paper will give an overview of more advanced charge pumping and Gated-Diode techniques for the process and reliability characterization of advanced CMOS devices. Its potential use for the device hot carrier reliability study and process characterization, e.g., oxide quality monitor, plasma-induced oxide damage, and STI effects will be presented. More recent developments for 1nm range ultra-thin gate oxide CMOS device applications will also be demonstrated. Further development and the road-blocks of these techniques will be addressed.