Abstract:
A novel RFCMOS process monitoring test structure has been proposed for the first time in this paper. Excellent agreement in DC and RF characteristics has been observed be...Show MoreMetadata
Abstract:
A novel RFCMOS process monitoring test structure has been proposed for the first time in this paper. Excellent agreement in DC and RF characteristics has been observed between conventional test structures and the new process monitoring test structure for both n and p MOSFETs of different device dimensions. This new layout approach can be extended to other devices such as MIM capacitors, diodes, MOS varactors and interconnects.
Published in: Proceedings of the 2004 International Conference on Microelectronic Test Structures (IEEE Cat. No.04CH37516)
Date of Conference: 22-25 March 2004
Date Added to IEEE Xplore: 06 July 2004
Print ISBN:0-7803-8262-5
Contents 