Extremely high-rate deposition of silicon thin films prepared by atmospheric plasma CVD method with a rotary electrode

The high-rate deposition of a-Si:H films for the photovoltaic layer of solar cells prepared by an atmospheric pressure plasma CVD method with a rotary electrode was investigated. VHP (150 MHz) atmospheric pressure plasma is generated at the narrow gap of less than 1 mm between the rotary electrode and the substrate. The atmospheric pressure and VHF plasma enable high-rate deposition and a reduction in ion damage to the growing surface. A large volume of the mixed gas can be supplied with high uniformity by the high-speed rotation of the electrode. A deposition rate of 10 /spl Aring//s-200 /spl Aring//s was obtained for a 100 mm/spl times/100 mm substrate, while maintaining conductivity and photosensitivity up to 200 /spl Aring//s. The efficiency of a-Si:H solar cells was found to be independent of deposition rate for proper hydrogen dilution ratios (10