CIGS thin film solar cells with InSe buffer layer

We investigated Cu(In,Ga)Se/sub 2/ (CIGS) based solar cells with In/sub 2/Se/sub 3/ (IS) deposited by evaporation, as buffer layer. Promissory results were obtained using, as buffer layer, a 50 nm thick indium selenide film, grown in the In/sub 2/Se/sub 3/ phase. Preliminary I-V measurements gave the following output parameters for cells fabricated using IS as buffer: J/sub sc/ = 23 mA/cm/sup 2/, V/sub oc/ = 0.48 V, FF /spl ap/ 0.55 and /spl eta/ = 7.4% with an irradiance of 80 mW/cm/sup 2/. Solar cells fabricated using a CdS buffer layer deposited by CBD on a CIGS substrate prepared under the same conditions of fabrication for CIGS/IS/ZnO cells, gave the following results: V/sub oc/ = 0.45 V, J/sub sc/ = 27.5 mA/cm/sup 2/, FF /spl ap/ 0.56 and /spl eta/ = 8.1.