Amorphous/crystalline silicon heterojunction solar cells with intrinsic buffer layer

Simple structure TCO/a-Si:H(n)/c-Si(p) heterojunction solar cells with varied emitters are investigated by current-voltage-characteristics (IV), photoluminescence (PL) and ultra violet photo electron spectroscopy (UPS). A confirmed efficiency of 16.2% on flat substrates is reached. Additionally, cells have been prepared with intrinsic a-Si:H(i) buffer layers, in order to passivate the proper pretreated wafers. This passivation results in an enhanced PL signal and UPS measurements indicate a reduced density of defect states in ultra thin a-Si:H(i) compared to a-Si:H(n) layers.