Electrothermal simulations of silicon carbide current limiting devices

SiC is a semiconductor material that could satisfy the requirements of electrical protective devices. This work presents two devices as current limiters for serial protection application. The first device structure is a vertical power MOSFET-like with an existing N channel. The second is a LVJET with buried p-wells and an additional gate electrode. Their electrical performances were simulated with ISE TCAD tools. A study of their electrothermal behavior is presented, demonstrating the SiC superiority over silicon with regards to this field.