Study of emitter structures for InSb thermal diodes

We reported earlier that introduction of potential barrier structures into emitter and collector regions of a thermoelectric material plate (thermal diode) greatly enhances effective figure of merit. Up to eight times increase was observed with corresponding efficiencies up to 40% of ideal Carnot cycle or an effective ZT of 3.2. Absolute efficiencies up to 18% were observed. Here we report a systematic study of emitter parameters that influence InSb thermal diode performance.