Sol-gel derived la modified PZT thin films: structure and properties

Lanthanum modified PZT thin films with compositions, namely 8/60/40, 8/70/30, 10/70/30 and 12/70/30 were deposited on platinized silicon substrates by sol-gel spin coating technique. Characterization of these films by XRD and SEM show that the films possess perovskite phase with submicron crystallite size. The saturation polarization (Ps), remnant polarization (PR) and coercive field (Ec) of polarization-electric field hysteresis loop are presented for all compositions. The 8/60/40 composition shows hysteresis loop with P/sub R/ = 11 /spl mu/C/cm/sup 2/. The temperature dependence of dielectric constant and dielectric loss of these films are also studied. Leakage current densities for these thin films are found to be in the range of 10/sup -/-10/sup -/ A/cm/sup 2/. To show the possible application of these thin films for micro electromechanical system (MEMS), a device incorporating an 8/60/40 PLZT thin film has been fabricated using silicon micromachining technology. This device functions satisfactorily as a vibration sensor with a resonance frequency of approximately 8.45 MHz.