A new EST with dual trench gate electrode (DTG-EST)

In this paper, the new dual trench gate Emitter Switched Thyristor (DTG-EST) is proposed for improving snap-back effect which leads to a lot of serious problems of device applications. And the parasitic thyristor that is inherent in the conventional EST is completely eliminated in this structure, allowing higher maximum controllable current densities for ESTs. The conventional EST exhibits snap-back with the anode voltage and current density 2.73 V and 35 A/cm/sup 2/, respectively. But the proposed DTG-EST exhibits snapback with the anode voltage and current density 0.96 V and 100 A/cm/sup 2/, respectively.