Modeling effects of velocity overshoot in extremely scaled MOSFETs

A physical model of velocity-overshoot of hot-carriers based on the balanced equation of energy is developed and implemented in MOSFET models. Derived from the Boltzmann equation, a simple analytic simulation model can be put into the BSIM3 simulation model. There are better identical verifications among the model of velocity overshoot, standard BSIM3 model (not including effects of velocity overshoot) and real device data.