Low-frequency noise in laser-debonded GaN films

Low-frequency noise was measured from laser-debonded HVPE-grown GaN films. Substantial increase in the noise was seen for the 5 /spl mu/m thick films, indicating generation of localized states due to laser illumination. For the 20 /spl mu/m thick films, low-frequency noise measured from the debonded sample is found to be similar to the control sample, indicating the material degradation is limited to the region close to the GaN-sapphire interface.