A highly scalable 2-bit asymmetric double-gate MOSFET nonvolatile memory

A Metal Oxide Nitride Oxide Semiconductor (MONOS) Asymmetric Double Gate (ADG) Nonvolatile Memory (NVM) cell is proposed. In addition to the improved scalability of the NVM cell made possible by the double-gate structure, the 2 conducting channels also provide a 2-bit per cell storage mechanism. The scalability of the device down to 50 nm is demonstrated by numerical simulation. The operation mechanisms including read, program and erase in an array structure are also studied and described in this paper.