Effect of new processes of inter-layer-dielectric on plasma charging damage in 0.13/spl mu/ dual gate oxide

New processes of Inter-Layer-Dielectric (ILD) in 0.13/spl mu/m dual gate oxide have been developed. Etch stop liner (ESL) changes from single stack SiN to dual stack ESL (SiON/SiN) and helium cooling is added during ILD high density plasma (HDP) film deposition. The plasma charging damage is investigated on new and old ILD process. Gate leakage of related antenna structures is measured. It is found from our study that new process changes can reduce thin 1.2V and thick 2.5V/3.3V gate leakage of antenna structures. So plasma charging damage is reduced by new ILD.