Massively parallel GOI test

Massively parallel GOI (gate oxide integrity) Vramp tests offer a fast method, capable of testing 6 test structures on a single touchdown of the probe card. This greatly reduced total test cycle times and costs. In this work, we have done extensive testing on 0.13/spl mu/m logic process on both thick/thin gate transistors (NMOS/PMOS). Comparison of single test structure testing versus massively parallel test structure testing has been done. There is no significant change in the voltage breakdown and gate leakage current parameters.