Comparison of GaInNAs laser diodes based on two to five quantum wells

We have investigated GaInNAs-GaAsN multiquantum-well (MQW) lasers with two-QW (DQW), three-QW (TQW), and five-QW (5QW) active regions and emission in the 1.3-/spl mu/m range. A solid-source molecular beam epitaxy system has been used to grow the structures. Operation of a GaInNAs 5QW laser is reported. Low threshold currents of 22 (DQW) to 52 mA (5QWs) and external efficiencies of 0.25 W/A (DQWs) to 0.16 W/A (5QWs) per facet are realized under CW operation. T/sub 0/-values of 121 K are obtained.