High-speed Schottky-barrier pMOSFET with f/sub T/=280 GHz

High-speed results on sub-30-nm gate length pMOSFETs with platinum silicide Schottky-barrier source and drain are reported. With inherently low series resistance and high drive current, these deeply scaled transistors are promising for high-speed analog applications. The fabrication process simplicity is compelling with no implants required. A sub-30-nm gate length pMOSFET exhibited a cutoff frequency of 280 GHz, which is the highest reported to date for a silicon MOS transistor. Off-state leakage current can be easily controlled by augmenting the Schottky barrier height with an optional blanket As implant. Using this approach, good digital performance was also demonstrated.