SiGe bipolar technology with 3.9 ps gate delay

A SiGe bipolar technology for future high frequency applications is presented. A cut-off frequency of 206 GHz and a maximum oscillation frequency of 197 GHz combined with a gate delay of 3.9 ps have been obtained. With a 86 GHz static frequency divider and a 110 GHz dynamic frequency divider state of the art high-speed circuits are achieved.