A 98 GHz voltage controlled oscillator in SiGe bipolar technology

In this paper two fully integrated voltage controlled oscillators (VCOs) in a 200GHz f/sub T/ SiGe bipolar technology are presented. The oscillators use on-chip transmission lines in their resonators and at the output for impedance transformation. One oscillator operates up to 98 GHz and achieves a phase noise of -97 dBc/Hz at an offset frequency of 1 MHz. It can be tuned from 95.2 GHz to 98.4 GHz and it consumes 12mA from a single -5 V supply. The second oscillator operates from 80.5 GHz up to 84.8 GHz with a phase noise of -98 dBc/Hz at 1 MHz offset frequency. These oscillation frequencies are the highest reported so far for fundamental-mode oscillators in silicon-based technologies.