An 8.2-GHz, 14.4mW, 1.6dB NF SiGe bipolar LNA with DC current reuse

A balanced low noise amplifier (LNA) has been integrated in a 0.25/spl mu/m BiCMOS technology. To reduce power consumption and improve performances, two stages that share the same DC current have been stacked. A Miller effect neutralization scheme avoids the need to cascode transistors. The LNA takes an area of 0.8 /spl times/ 1.15 mm/sup 2/ (bondwire pads excluded) and draws 14.4mW from a 1.8V supply voltage. In this conditions, measured parameters at 8.2-GHz are NF=1.6dB, power gain Gp=22-dB, output P1dB=3.3dBm at 8.2-GHz.