Growth and characterization of 850 nm InGaAsP/InGaP strain-compensated VCSELs by MOCVD

In this paper, we demonstrate the growth and characterization of 850 nm oxide-confined VCSELs utilizing In/sub 0.18/Ga/sub 0.82/P/sub 0.2//ln/sub 0.4/Ga/sub 0.6/P strain-compensated SC-MQWs by MOCVD. The VCSELs show very low threshold current good temperature performance, and high modulation response up to 12.5 Gb/s from 25C to 85C.