An analytical retention model for SONOS nonvolatile memory devices in the excess electron state

For the first time, we present a SONOS retention model that incorporates both T-B and TE detrapping mechanisms. First, the influences of gate dielectric thickness, temperature and trap energy on the electron decay are discussed, based on calculations of detrapping time constants. Next, an analytical SONOS retention model is presented, considering an arbitary trap energy distribution in the silicon nitride. Finally, the model is verified with a good agreement between measured and simulated SONOS retention characteristics at temperatures from 22/spl deg/C to 225/spl deg/C.