Monolithically integrated Si/SiGe resonant interband tunneling diodes/CMOS MOBILE latch with high voltage swing

The Si/SiGe RITDs grown by MBE have been monolithically integrated with CMOS for the first time. The integrated devices resulted in a PVCR (peak-to-valley current ratio) of 2.8 at room temperature, showing promise towards the realization of RITD/CMOS circuitry. A RITD-NMOS MOBILE latch has been demonstrated in Si. This logic element enables digital and ternary circuit design for high density storage. The I-V characteristics of the integrated CMOS/RITD devices and I/sub D/-V/sub D/ characteristics of NMOS and PMOS have been studied.