Computer Simulation of Impurity Diffusion in Semiconductors by the Monte Carlo Method

A methodology of impurity diffusion in semiconductors by the Monte Carlo method has been presented. The simulation is carried out by repeating the motion of both vacancies and self-interstitials with the complementary weighting factor for the jumps of respective point defects. This method is applied to impurity diffusion from a limited source in a virtual semiconductor crystal and its validity is confirmed.