Ultra low power SiGe:C HBT for 0.18 /spl mu/m RF-BiCMOS

A SiGe:C HBT in 0.18 /spl mu/m BiCMOS is developed for ultra low power applications based on a unique optimization solution, including a dedicated PIN e/b design combined with a two-step Ge profile and a two-step SIC. State-of-the-art performance is achieved with respect to benchmarked low power devices.