Single-electron effect in PtSi/porous Si Schottky junctions

PtSi/porous Si schottky junctions exhibit a breakdown type current-voltage (I-V) curve in reverse bias mode. Below breakdown their current density is much less than regular PtSi/Si junctions. The breakdown voltage decreases with application of infrared radiation for both n and p-type junctions. N-type junctions are sensitive to IR wavelengths of up to 7 /spl mu/m even at room temperature. The small reverse bias current, the change of breakdown voltage with radiation, and IR sensitivity at room temperature can all be explained by single-electron effect. Numerical results show that representative porous schottky junctions exhibit depletion capacitances in 10/sup -19/ f range which is enough to observe single-electron effect at room temperature. Single-electron effect and avalanche multiplication can explain existing experimental data.