Formation of ohmic contacts to n-GaAs via heterojunction by using indium and gold

Ohmic contacts with contact resistivity of the order of M Omega -cm/sup 2/, have been successfully fabricated by deposition of a thin film of gold and indium on a clean GaAs surface followed by annealing. An annealing temperature as low as 280 degrees C can be used to achieve this result. Increasing the annealing temperature to 350 degrees C reduces the required annealing time to only 12 seconds.<>