Properties of high resistivity Cr-Si-O thin-film resistor

Several Cr-Si-O thin films with a resistivity of 5-10 m Omega -cm were studied as candidates for high-resistance stable resistors. The films were prepared by reactive sputtering with an Ar+O/sub 2/ gas mixture. It was found that the specific resistivity increases with increased oxygen content in the film, and that the high oxygen content in the film suppresses the formation of CrSi upon thermal treatment up to 673 K. The films are resistant to oxidation when thermally treated in an oxygen-containing environment, and are thus suitable for high-temperature operation in air. The resistance of Cr-Si-O thin films can change with time during high-temperature operation (e.g. in a thermal printing head application) due to the formation of the silicide, annealing effects in the film and the electromigration of components of the film materials. The optimum oxygen content for stabilizing the thin film under high-temperature conditions and high electric current density was determined.<
>