Diffusion and defect formation in ion implanted Si nanostructures

Simulations and measurements of ion implantation and diffusion in 20-200 nm Si nanostructures have been carried out. Simulations predict a reduction in transient enhanced diffusion with decreasing nanostructure dimensions and a non-uniform diffusion front. SIMS measurements provide useful information in the near surface region, but for deeper profiling, detailed modeling is required. TEM shows the presence of extended defects in structures as small as 40 nm.