Influence of antenna shape and resist patterns on charging damage during ion implantation

MOS capacitors with attached poly electrodes (antennas) were designed with various antenna shapes for the evaluation of charging damage during ion implantation. Different resist patterns were implemented to investigate the influence of photoresist on charging damage. The influence of dose, beam current, and ion energy was studied for p-type and n-type structures. For the first time, the influence of all these parameters on charging damage was analyzed using the same set of test devices. The influence of beam current and ion energy on charging damage was found to be different for p-type and n-type devices. The substrate effect on charging damage was in contrast to previously reported data for most of the implantation parameters under investigation.