Dose monitoring of heavy ion implantation by Therma-Wave signal

Dosimetry of ion implantation is monitored mainly by Therma-Wave (TW) signals for low-medium dose ranges. Repeatability and uniformity of TW signals for indium (In) and antimony (Sb) implantation were researched in order to improve dose monitoring accuracy. It was found that TW signals were influenced considerably by implant conditions, wafer surface status, and TW measurement parameters. Because TW signals have high dose sensitivity in some ranges of In and Sb implantation, TW signals became a good tool of dose monitoring of such heavy ions by establishing appropriate management of the above conditions.