Recessed junction and low energy n-junction implantation characteristics

The characteristics of cell transistor with low energy junction implantation and recessed junction, which is formed by in_situ phosphorus doped selective silicon growth, are investigated. Adding the low energy n-junction implantation drastically reduces the contact resistance of pad/n-junction. And also, the drive current is improved without any degradation of BV (Breakdown Voltage) and leakage characteristics. Plasma damage free TDSE (Thermal Desorption of Silicon Etching) processing using the Cl
₂
gas chemistry in UHV CVD Chamber is used to control the junction depth. The recessed junction is formed with phosphorus-doped silicon using the SEG (Selective Epitaxial Growth) process and the characteristics of recessed junction are evaluated.