Channeling effects and quad chain implantation process optimization for low energy boron ions

The results of low energy boron implantation on a batch process ion implanter are presented showing that a channeling may play an important role and have an effect on the electrical characteristics of the implanted layer. A simple model based on a channeling particularity of low energy B
⁺
ions was proposed. It allows the establishment of a correlation between implantation angles and processes parameters. Optimized results for boron quad chain process are reported, which reduce differential channeling and provide wafer uniformities within σ<0.5 %.