Characterization and modeling of the LPT CSTBT-the 5/sup th/ generation IGBT

The 5/sup th/ generation IGBT device, carrier stored trench bipolar transistor (CSTBT), has been introduced in the market. This newer generation IGBT represents the current state of the art with its excellent electrical characteristics. In this work, the physics-based electro-thermal Leturcq-Palmer IGBT model, which has been proven robust by the validation with NPT and PT IGBTs, is used to simulate the behavior of the CSTBT. The hard switching experiments have been performed using inductive and resistive loads under different temperature conditions. The simulation results from the model are compared with the experimental results under different conditions to validate the model accuracy.